Tuning the performance of dysprosium oxide thin film as a gate dielectric layer via annealing in concurrent flow of nitrogen and oxygen ambience
Fields of Study & Subjects
Semiconductor materials and devices
Copper Interconnects and Reliability
Ferroelectric and Negative Capacitance Devices
Publication details
- Journal / source
- Ceramics International
- Volume
- 52
- Issue
- 11
- Pages
- 17997–18001
- Publication date
- 13 February 2026
- Language
- EN