Tuning the performance of dysprosium oxide thin film as a gate dielectric layer via annealing in concurrent flow of nitrogen and oxygen ambience

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Authors: Ming Xu, Junpeng Ren, Zhi Yao
Cited by: 0
References: 39

Fields of Study & Subjects

Semiconductor materials and devices Copper Interconnects and Reliability Ferroelectric and Negative Capacitance Devices

Publication details

Journal / source
Ceramics International
Volume
52
Issue
11
Pages
17997–18001
Publication date
13 February 2026
Language
EN