Engineering optoelectronic properties in gallium oxide/gallium nitride heterostructures via post-rapid thermal annealing temperature modulation
Fields of Study & Subjects
Ga2O3 and related materials
GaN-based semiconductor devices and materials
Semiconductor materials and devices
Publication details
- Journal / source
- Ceramics International
- Volume
- 52
- Issue
- 13
- Pages
- 20956–20973
- Publication date
- 12 March 2026
- Language
- EN