Engineering optoelectronic properties in gallium oxide/gallium nitride heterostructures via post-rapid thermal annealing temperature modulation

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Authors: A. Muhammad, Sha Shiong Ng, Hock Jin Quah, Nur Atiqah Hamzah, Momin S.M. Abutawahina
Cited by: 0
References: 50

Fields of Study & Subjects

Ga2O3 and related materials GaN-based semiconductor devices and materials Semiconductor materials and devices

Publication details

Journal / source
Ceramics International
Volume
52
Issue
13
Pages
20956–20973
Publication date
12 March 2026
Language
EN