Modelling and simulation of selective Si3N4 etching in 3D NAND structures

Chemical Engineering Science 2026

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Authors: Daoming Yang, Lei Zhou, Shuangyu Hao, Guanghua Ye, Xinggui Zhou

DOI: 10.1016/j.ces.2026.123473

Cited by: 0

References: 28

Fields of Study & Subjects

Semiconductor materials and devices Plasma Diagnostics and Applications 3D IC and TSV technologies

References 28