Monolithic β-Ga2O3 gate driver integrated circuit

Digital control systems cannot directly provide the voltage swing and gate charge necessary for high-speed operation of power MOSFETs. We report a monolithic β-Ga 2 O 3 gate-driver integrated circuit (IC) fabricated on a 0.96 mm 2 footprint. The circuit integrates a resistor–transistor logic (RTL) level-shifting stage with a push–pull output buffer, delivering up to 8.4 mA drive current across a 0–7.5 V control range. A recessed thin-film β-Ga 2 O 3 load resistor and a multi-finger MOSFET architecture enable compact circuit implementation, while an Al 2 O 3 /SiO 2 bilayer gate dielectric reduces the interface traps ( D it ∼ 3.3 × 10 12 cm -2 ·eV -1 ) and hysteresis ( V HY < 0.1 V). The driver achieves 996 ns/400 ns turn-on/turn-off times ( f sw,max ∼716 kHz) while driving capacitive load of 840 pF. Although Si, SiC and GaN drivers are faster, this work demonstrates β-Ga 2 O 3 ’s potential as an emerging platform for future high-voltage power ICs.