A Non-Volatile Radio Frequency Switch Based on an Ag/HfO2/MoS2/Pt Structure Memristor

: Addressing the critical need for high-performance non-volatile RF switches in 6G reconfigurable systems, this paper proposes a novel RF switch that introduces an innovative MoS 2 interlayer into HfO 2 memristors to precisely control the conductive filament (CF) dynamics. The MoS 2 /HfO 2 heterointerface creates differentiated ion migration pathways that stabilize CF formation and rupture processes, achieving low switching voltages (0.7 V/-0.6 V) and nanosecond response times (55 ns/70 ns). RF characterization demonstrates insertion loss of 1.3-1.7 dB and isolation >9.2 dB across 0-43.5 GHz. This heterostructure design strategy advances memristor-based RF switches beyond current performance limitations and provides a scalable pathway for next-generation reconfigurable wireless systems.