Large magnetoresistance and nonvolatile multi-level memory in VSi2N4/MoSiGeN4/VSi2N4 magnetic tunnel junctions

Chinese Journal of Physics 2026

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Authors: Jing-Run Wei, Wei-Kang Zhang, Zong‐Liang Li, Chuan-Kui Wang, Xiao‐Xiao Fu

DOI: 10.1016/j.cjph.2026.01.006

Cited by: 0

References: 41

Fields of Study & Subjects

2D Materials and Applications Heusler alloys: electronic and magnetic properties Graphene research and applications

References 41