High-conduction and ultra-steep switching in boron-phosphide cold-source field-effect transistors

Chinese Journal of Physics 2026

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Authors: Jingjun Chen, Zelong Ma, Danni Wang, Xu Li, Songyang Li, Peisong Lu, Wenjie Chen, Baoan Bian

DOI: 10.1016/j.cjph.2026.02.020

Cited by: 2

References: 44

Fields of Study & Subjects

2D Materials and Applications Advancements in Semiconductor Devices and Circuit Design Superconducting and THz Device Technology

References 44