Strain-engineered optoelectronic properties of MoGe2N4/WGe2N4 van der Waals heterostructures: A first-principles investigation for next-generation photonic applications
Fields of Study & Subjects
2D Materials and Applications
MXene and MAX Phase Materials
Inorganic Chemistry and Materials
Publication details
- Journal / source
- Chinese Journal of Physics
- Publisher
- Elsevier BV
- Volume
- 101
- Pages
- 634–652
- Publication date
- 27 February 2026
- Language
- EN