Structural and electric-field control of exciton in coupled double InGaN/GaN quantum dots

Chinese Journal of Physics 2026

View at publisher

Authors: M. Jaouane, H. Azmi, R. Arraoui, A. Fakkahi, J. El-Hamouchi, A. Mazouz, A. Ed-Dahmouny, Ahmed Sali

DOI: 10.1016/j.cjph.2026.04.028

Cited by: 1

References: 24

Fields of Study & Subjects

GaN-based semiconductor devices and materials Semiconductor Quantum Structures and Devices ZnO doping and properties

References 24