Manganese valence modulation in ZnGa2O4 via simultaneously localized charge accumulation and oxygen vacancy engineering controlled by Li+ and F− substitutions for tailored applications

Chinese Journal of Structural Chemistry 2026

View at publisher

Authors: C.X. Chen, W. Li, C.Y. Ni, W.B. Dai

DOI: 10.1016/j.cjsc.2026.100868

Cited by: 2

References: 22

Fields of Study & Subjects

Luminescence Properties of Advanced Materials Ga2O3 and related materials Microwave Dielectric Ceramics Synthesis

References 22