Structural, electronic, and magnetic properties of N, P, As, Sb, and Bi dopants in 2D monolayer SiC for high-power electronic application

Computational Condensed Matter 2026

View at publisher

Authors: Emmanuel Igumbor, Edwin R Mapasha, A.T. Raji

DOI: 10.1016/j.cocom.2026.e01219

Cited by: 0

References: 50

Fields of Study & Subjects

Silicon Carbide Semiconductor Technologies 2D Materials and Applications Semiconductor materials and interfaces

References 50