First-principles study on formation and action mechanism of intrinsic Ga and O vacancy in β-Ga₂O₃

Computational Materials Science 2026

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Authors: Libin Zhang, Hao Bai, Ji Sheng Xia, Zhiyin Gan, Jiacheng Zhou, Longchao Cao, Xiang Li

DOI: 10.1016/j.commatsci.2026.114676

Cited by: 1

References: 51

Fields of Study & Subjects

Ga2O3 and related materials GaN-based semiconductor devices and materials Semiconductor materials and devices

References 51