Band alignment transition and power conversion efficiency in MoSi₂N₄/GaN heterojunction via external electric field modulation

Computational Materials Science 2026

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Authors: J WANG, Nana Zhao, Li Ma, Xianhui Wang, Jie Cui, Ninshu Ma

DOI: 10.1016/j.commatsci.2026.114859

Cited by: 1

References: 40

Fields of Study & Subjects

GaN-based semiconductor devices and materials 2D Materials and Applications Boron and Carbon Nanomaterials Research

References 40