Investigation of N-polar GaN-diamond heterogeneous integration enabled by in-situ sputtered aluminum nitride interlayer

Diamond and Related Materials 2026

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Authors: Ye Tian, Lishu Wu, Guoliang Ma, Yu Zhou, Fengwen Mu, Yu Chen, Sen Huang, Ke Wei, Peng Xu, Chao Yuan, Qian Li, Xinhua Wang

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Qian Sun, Xinyu Liu

DOI: 10.1016/j.diamond.2026.113310

Cited by: 1

References: 48

Fields of Study & Subjects

GaN-based semiconductor devices and materials Thermal properties of materials Silicon Carbide Semiconductor Technologies

References 48