Study of the high-temperature recovery kinetics of chemical disorder in neutron-irradiated 4H-SiC via Raman spectroscopy
Fields of Study & Subjects
Silicon Carbide Semiconductor Technologies
Fusion materials and technologies
Nuclear materials and radiation effects
Publication details
- Journal / source
- Diamond and Related Materials
- Volume
- 162
- Pages
- 113325–113325
- Publication date
- 14 January 2026
- Language
- EN