Study of the high-temperature recovery kinetics of chemical disorder in neutron-irradiated 4H-SiC via Raman spectroscopy

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Authors: Xujie Hao, Shou Zhang, Xinyue Yan, Fei Zhu, Defeng LIU, Jiahui Yan, Hongfei Liu, Yun Wu, Cuihong Wang, Yuchen Zhang, Rongyun Jiang
Cited by: 0
References: 34

Fields of Study & Subjects

Silicon Carbide Semiconductor Technologies Fusion materials and technologies Nuclear materials and radiation effects

Publication details

Journal / source
Diamond and Related Materials
Volume
162
Pages
113325–113325
Publication date
14 January 2026
Language
EN