Selective p+ regrowth for boron-doped diamond MOSFETs on heteroepitaxial (100) diamond with breakdown voltages over 800 V

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Authors: Taemyung Kwak, Eonhee Noh, Seong-woo Kim, Okhyun Nam
Cited by: 1
References: 35

Fields of Study & Subjects

Diamond and Carbon-based Materials Research Semiconductor materials and devices Advanced Data Storage Technologies

Publication details

Journal / source
Diamond and Related Materials
Publisher
Elsevier BV
Volume
165
Pages
113639–113639
Publication date
13 April 2026
Language
EN