Selective p+ regrowth for boron-doped diamond MOSFETs on heteroepitaxial (100) diamond with breakdown voltages over 800 V
Fields of Study & Subjects
Diamond and Carbon-based Materials Research
Semiconductor materials and devices
Advanced Data Storage Technologies
Publication details
- Journal / source
- Diamond and Related Materials
- Publisher
- Elsevier BV
- Volume
- 165
- Pages
- 113639–113639
- Publication date
- 13 April 2026
- Language
- EN