Fabrication and characterization of a hydrogen-terminated diamond MOSFET with buried p+ type electrodes formed by ion implantation

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Authors: Sakura Uehara, Yuhei Seki, Yasushi Hoshino, Hitoshi Umezawa, Junichi H. Kaneko
Cited by: 1
References: 54

Fields of Study & Subjects

Diamond and Carbon-based Materials Research Advancements in Semiconductor Devices and Circuit Design Semiconductor materials and devices

Publication details

Journal / source
Diamond and Related Materials
Publisher
Elsevier BV
Volume
169
Pages
114054–114054
Publication date
10 August 2026
Language
EN