Fabrication and characterization of a hydrogen-terminated diamond MOSFET with buried p+ type electrodes formed by ion implantation
Fields of Study & Subjects
Diamond and Carbon-based Materials Research
Advancements in Semiconductor Devices and Circuit Design
Semiconductor materials and devices
Publication details
- Journal / source
- Diamond and Related Materials
- Publisher
- Elsevier BV
- Volume
- 169
- Pages
- 114054–114054
- Publication date
- 10 August 2026
- Language
- EN