Interfacial spin configurations and the microscopic origin of exchange bias at the IrMn/CoFeB interface

Read full text
Authors: Jiahao Liu, Xingtai Chen, Jiaqi Lu, W. X. Li, Zhaochun Liu, Yongzhuo Zhang, Peter Bencok, P. Steadman, Wenqing Liu, Weisheng Zhao, Shouzhong Peng
Cited by: 1
References: 45

Abstract

Exchange bias fields at antiferromagnet/ferromagnet (AFM/FM) interfaces play a crucial role in the performance of spintronic devices. Despite extensive research, the physical origin of exchange bias remains incompletely understood. In this study, we conduct a detailed investigation of a prototype AFM/FM interface widely used in spintronic applications, i.e., the IrMn/CoFeB interface. High-resolution synchrotron X-ray measurements reveal the existence of uncompensated Mn spins at the interface. While most of these spins are strongly coupled to the adjacent CoFeB layer, a small fraction remains pinned to the underlying IrMn underlayer. Element-specific X-ray magnetic circular dichroism hysteresis loops show that these pinned spins can be switched by increasing the annealing magnetic field. Furthermore, micromagnetic simulations indicate that an imbalance in the quantity of antiparallel pinned spins contributes to the observed variation in exchange bias. Overall, these findings offer important insights into the microscopic mechanisms governing exchange bias and its tunability.

Fields of Study & Subjects

Magnetic properties of thin films ZnO doping and properties Heusler alloys: electronic and magnetic properties

Publication details

Journal / source
Fundamental Research
Publisher
Elsevier BV
Volume
6
Issue
5
Pages
2891-2897
Publication date
1 January 2026
Language
EN