A high-precision analytical model of transient thermal stresses of through-silicon vias in 3-D integrated circuits
Fields of Study & Subjects
3D IC and TSV technologies
Silicon Carbide Semiconductor Technologies
Advancements in Semiconductor Devices and Circuit Design
Publication details
- Journal / source
- International Journal of Heat and Mass Transfer
- Publisher
- Elsevier BV
- Volume
- 260
- Pages
- 128356–128356
- Publication date
- 6 February 2026
- Language
- EN