A high-precision analytical model of transient thermal stresses of through-silicon vias in 3-D integrated circuits

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Authors: Luhao Zhai, Junqin Zhang, Guangbao Shan, Xin Jin, W. Y. Chen, Yintang Yang
Cited by: 1
References: 42

Fields of Study & Subjects

3D IC and TSV technologies Silicon Carbide Semiconductor Technologies Advancements in Semiconductor Devices and Circuit Design

Publication details

Journal / source
International Journal of Heat and Mass Transfer
Publisher
Elsevier BV
Volume
260
Pages
128356–128356
Publication date
6 February 2026
Language
EN