Mechanism and multiphysics simulation of edge hot-spot formation in GaN HEMTs: Coupled thermo–electro–mechanical and trap-state effects

International Journal of Heat and Mass Transfer 2026

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Authors: H Xu, Fengyi Li, Aoran Fan, Juan Xue, Fanyuan Zhang, Yu Zhang, Weigang Ma, Xing Zhang

DOI: 10.1016/j.ijheatmasstransfer.2026.129198

Cited by: 1

References: 25

Fields of Study & Subjects

GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies Thermal properties of materials

References 25