Spreading thermal transport in GaN nanostructures: Impact of interface and size induced anisotropy on effective thermal conductivity

International Journal of Thermal Sciences 2026

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Authors: X.M. Chen, Xuqi Sheng, Daosheng Tang
DOI: 10.1016/j.ijthermalsci.2026.110695
Cited by: 0
References: 25

Fields of Study & Subjects

Thermal properties of materials GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies

Publication details

Journal / source
International Journal of Thermal Sciences
Volume
224
Pages
110695–110695
Publication date
16 January 2026
Language
EN