Corrigendum to “Ultrahigh performance of self-powered far-UVC detector based on MOCVD-grown α-Ga2O3 thin film without any phase stabilizer” [J. Alloys Compd. 1041 (2025) 183842]
Fields of Study & Subjects
Ga2O3 and related materials
Thin-Film Transistor Technologies
GaN-based semiconductor devices and materials
Publication details
- Journal / source
- Journal of Alloys and Compounds
- Volume
- 1050
- Pages
- 185925–185925
- Publication date
- 1 January 2026
- Language
- EN