InP HEMTs employing strain-compensated Al-rich InAlAs for low-noise and low-power consumption

Journal of Alloys and Compounds 2026

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Authors: Juwon Seo, H. J. Kim, Won Jun Lee, Beom Soo Joo, Hyungduk Ko, Il Ki Han, Gumin Kang, Jae-Hoon Han, Daehwan Ahn, Mun Seok Jeong, JoonHyun Kang
DOI: 10.1016/j.jallcom.2026.185970
Cited by: 0
References: 27

Fields of Study & Subjects

Semiconductor Quantum Structures and Devices Quantum and electron transport phenomena Advancements in Semiconductor Devices and Circuit Design

Publication details

Journal / source
Journal of Alloys and Compounds
Volume
1051
Pages
185970–185970
Publication date
1 January 2026
Language
EN