SiC-based AlN buffer layer and band alignment in Ga2O3/AlN/SiC heterojunctions
Fields of Study & Subjects
Ga2O3 and related materials
GaN-based semiconductor devices and materials
Thin-Film Transistor Technologies
Publication details
- Journal / source
- Journal of Alloys and Compounds
- Publisher
- Elsevier BV
- Volume
- 1055
- Pages
- 186268–186268
- Publication date
- 22 January 2026
- Language
- EN