Temperature-governed lattice disorder, residual stress, and recovery in CVD 4H-SiC under Al implantation and annealing

Journal of Alloys and Compounds 2026

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Authors: Zhoudong Yang, Botao Sun, Xinyue Wang, Yuanhui Zuo, Hongyu Tang, Changran Zheng, Zhimin Tang, Guo Qi Zhang, Jiajie Fan

DOI: 10.1016/j.jallcom.2026.186279

Cited by: 2

References: 65

Fields of Study & Subjects

Silicon Carbide Semiconductor Technologies Silicon and Solar Cell Technologies Thin-Film Transistor Technologies

References 65