Three-dimensional growth mechanism and dislocation evolution of Ge-doped GaN grown by Na-flux method

Journal of Alloys and Compounds 2026

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Authors: Jiafan Chen, Zongliang Liu, Zhiwei Si, XiaoMing Dong, Mutong Niu, Xujun Su, Tao Zhang, XiaoHui Peng, Mengya Li, Ke Xu

DOI: 10.1016/j.jallcom.2026.186427

Cited by: 0

References: 56

Fields of Study & Subjects

GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies Ga2O3 and related materials

References 56