Characterisation of Si gradually doped InP epilayers grown by LP-MOVPE

Journal of Alloys and Compounds 2026 Open access

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Authors: Adriana Łozińska, Wojciech Dawidowski, Á. Vincze, D. Radziewicz, Mikołaj Badura, A. Szyszka, B. Ściana
DOI: 10.1016/j.jallcom.2026.186905
Cited by: 0
References: 43

Fields of Study & Subjects

Semiconductor materials and interfaces Semiconductor materials and devices Ion-surface interactions and analysis

Publication details

Journal / source
Journal of Alloys and Compounds
Volume
1058
Pages
186905–186905
Publication date
18 February 2026
Language
EN