Record- low thermal boundary resistance of GaN-on-diamond structure with ultra-high bonding rate via surface reconstruction bonding technique

Journal of Alloys and Compounds 2026

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Authors: Shiming Li, Mei Wu, Yuan Li, Xiaohan He, Haolun Sun, Ling Yang, Hao Lu, Bin Hou, Xu Zou, Meng Zhang, Fengwen Mu, Chao Yuan

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Xiaohua Ma, Yue Hao

DOI: 10.1016/j.jallcom.2026.186906

Cited by: 0

References: 39

Fields of Study & Subjects

GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies 3D IC and TSV technologies

References 39