High performance self-powered deep ultraviolet photodetector based on type-II CuBr/β-Ga2O3 p-n heterostructure for UV imaging

Self-powered deep-ultraviolet photodetectors have significant potential for applications in monitoring and communication, astronomical observation, missile guidance, and optical imaging. Herein, a type-II heterojunction based on p-CuBr/n-β-Ga 2 O 3 was fabricated by using pulsed laser deposition and vacuum thermal evaporation techniques for DUV photodetection and imaging applications. Under 255 nm DUV irradiation, the heterojunction device exhibits remarkable deep-UV response properties with peak responsivity of 38.99 mA/W and specific detectivity of 3.37 × 10 12 Jones at 0 V. Under periodic irradiation at 255 nm, the device exhibits high reproducibility and good operational stability, with fast response (86 ms) and recovery (51 ms) times. A new and effective approach to achieving high-performance self-powered DUV photodetectors has been demonstrated.