Effect of Ti contact layer thickness and annealing on Ti/Al/Ti/Au ohmic contacts to N-face Fe-doped semi-insulating GaN

Journal of Alloys and Compounds 2026 Open access

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Authors: Yuanhang Sun, Hao Zhou (136535), Xinyu Hao, Zhengqian Lu, Yuning Wang, Juemin Yi, Yumin Zhang, Jianfeng Wang, Ke Xu

DOI: 10.1016/j.jallcom.2026.187194

Cited by: 0

References: 35

Fields of Study & Subjects

Semiconductor materials and interfaces GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies

References 35