Revealing the nitrogen content-dependent growth mode and crystal properties of GaN grown by the Na-flux method
Fields of Study & Subjects
GaN-based semiconductor devices and materials
Ga2O3 and related materials
Nanowire Synthesis and Applications
Publication details
- Journal / source
- Journal of Alloys and Compounds
- Publisher
- Elsevier BV
- Volume
- 1063
- Pages
- 187691–187691
- Publication date
- 30 March 2026
- Language
- EN