Effects of active carrier concentration and Ge content on the contact resistivity of boron-doped Si1-xGex films produced by ion implantation and subsequent nanosecond laser annealing

Journal of Alloys and Compounds 2026

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Authors: Kiseok Lee, Dongmin Yoon, Dae‐Hong Ko

DOI: 10.1016/j.jallcom.2026.188193

Cited by: 1

References: 57

Fields of Study & Subjects

Silicon and Solar Cell Technologies Copper Interconnects and Reliability Semiconductor materials and interfaces

References 57