Defect interaction in Mg-ion implanted GaN

Investigation of ion implantation-induced damage is critical for regulating the defect states of GaN. To explore the effect of Mg ion implantation dose on the structure and defects of GaN, MOCVD-grown GaN samples implanted at different doses were characterized. The results indicate that ion implantation induces lattice disorder in GaN, causing periodic distortion of its c -axis lattice constant. The implanted defects exhibit significant interactions. With increasing ion dose, leveraging GaN's highly efficient dynamic annealing effect, point defects preferentially nucleate on basal planes to form two-dimensional clusters. These clusters act as efficient absorbers for point defects. TEM observations revealed defect structures such as dislocation loops, stacking faults, and vacancy clusters within the samples. However, even at the highest dose of 6×10 15 cm -2 in this experiment, GaN has not completely amorphized, which is attributed to the efficient dynamic annealing effect. This study clarifies the intrinsic mechanisms of lattice changes and defect interactions in GaN under Mg ion implantation, providing experimental support for the regulation of ion implantation doping processes and defect control.