Study on the transport of phosphorus dopant during the n-type monocrystalline silicon growth by Czochralski technique

Journal of Crystal Growth 2026

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Authors: Junling Ding, Haowen Yu, Zaoyang Li, Q. Chen, Pengfei Wang, Lijun Liu

DOI: 10.1016/j.jcrysgro.2026.128492

Cited by: 2

References: 36

Fields of Study & Subjects

Silicon and Solar Cell Technologies Solidification and crystal growth phenomena Advanced Surface Polishing Techniques

References 36