Characterization of III-V layers grown on Ge|Si virtual substrates fabricated by LT-PECVD for photovoltaic devices

Journal of Crystal Growth 2026 Open access

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Authors: Elisa García-Tabarés, Víctor Orejuela, Ignacio Rey‐Stolle, Verónica Braza, Daniel F. de los Reyes, Paula Mouriño, Raquel Resta, Víctor J. Gómez, Pere Roca i Cabarrocas, Iván García
DOI: 10.1016/j.jcrysgro.2026.128493
Cited by: 0
References: 18

Abstract

The integration of III-V semiconductors on silicon through Ge|Si virtual substrates has shown significant potential. Conventional methods typically employ relatively thick Ge layers (several microns) to produce surfaces with low defect densities, though these layers introduce constraints—particularly the risk of cracking—due to the differing thermal expansion coefficients between Si, Ge, and subsequent III-V materials. A novel approach was developed to alleviate thermal strain by drastically reducing the Ge layer thickness (

Fields of Study & Subjects

solar cell performance optimization Silicon and Solar Cell Technologies Semiconductor materials and interfaces

Publication details

Journal / source
Journal of Crystal Growth
Volume
680
Pages
128493–128493
Publication date
10 January 2026
Language
EN