Multilayer nucleation at step walls: a low-barrier pathway for polytype control in SiC crystal growth
Fields of Study & Subjects
Silicon Carbide Semiconductor Technologies
Crystallization and Solubility Studies
Solidification and crystal growth phenomena
Publication details
- Journal / source
- Journal of Crystal Growth
- Volume
- 680
- Pages
- 128502–128502
- Publication date
- 29 January 2026
- Language
- EN