Stacking fault analysis for the early-stages of PVT growth of 4H-SiC crystals
Fields of Study & Subjects
Silicon Carbide Semiconductor Technologies
Advanced ceramic materials synthesis
GaN-based semiconductor devices and materials
Publication details
- Journal / source
- Journal of Crystal Growth
- Volume
- 681
- Pages
- 128523–128523
- Publication date
- 9 February 2026
- Language
- EN