Characterization and analysis of high-quality 4H-SiC epitaxy suitable for the super-junction adopting “multiple epitaxy-channeling implantation” route

Journal of Crystal Growth 2026

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Authors: Haobo Kang, Hao Yuan, Fengyu Du, Yu Zhou, Boyi Bai, Wenhan Yang, Jingyu Li, Tianyu Shu, Minghua Zhu, Hongsheng Yi, Cen Tang, Jin Rao

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Xiaoyan Tang, Chao Han, Qingwen Song, Yuming Zhang

DOI: 10.1016/j.jcrysgro.2026.128533

Cited by: 1

References: 11

Fields of Study & Subjects

Silicon Carbide Semiconductor Technologies Silicon and Solar Cell Technologies Advanced Surface Polishing Techniques

References 11