3D/nano-island/2D growth modes in Sb-mediated Ge epitaxy on Si(111) surface

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Authors: A. S. Petrov, Vladislav Gumbarg, Dmitriy A. Nasimov, Dmitry I. Rogilo, Dmitry V. Sheglov, Alexander V. Latyshev
Cited by: 0
References: 52

Fields of Study & Subjects

Semiconductor materials and interfaces Surface and Thin Film Phenomena Semiconductor Quantum Structures and Devices

Publication details

Journal / source
Journal of Crystal Growth
Volume
683
Pages
128553–128553
Publication date
25 February 2026
Language
EN