Influence of V/III ratio of p-GaAsSb base on the current gain in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors
Fields of Study & Subjects
Semiconductor Quantum Structures and Devices
Radio Frequency Integrated Circuit Design
solar cell performance optimization
Publication details
- Journal / source
- Journal of Crystal Growth
- Publisher
- Elsevier BV
- Volume
- 688
- Pages
- 128624–128624
- Publication date
- 16 April 2026
- Language
- EN