Effect of crucible position and source height on the growth of AlN crystal: A numerical simulation study

Journal of Crystal Growth 2026

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Authors: Jiasai Ma, Jiachen Du, Huikun Hao, Hui Zhu, Lei Zhang

DOI: 10.1016/j.jcrysgro.2026.128649

Cited by: 1

References: 28

Fields of Study & Subjects

GaN-based semiconductor devices and materials Acoustic Wave Resonator Technologies Electromagnetic Simulation and Numerical Methods

References 28