Engineered p-type AlGaN layer for enhanced deep ultraviolet light-emitting diodes performance

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Authors: Aiman Fatima, Muhammad Usman, Shazma Ali, Anis Naveed, Anuda Bibi, Haseena Noor
Cited by: 2
References: 24

Fields of Study & Subjects

GaN-based semiconductor devices and materials Ga2O3 and related materials Photocathodes and Microchannel Plates

Publication details

Journal / source
Journal of Luminescence
Publisher
Elsevier BV
Volume
293
Pages
121788–121788
Publication date
4 February 2026
Language
EN