Engineered p-type AlGaN layer for enhanced deep ultraviolet light-emitting diodes performance
Fields of Study & Subjects
GaN-based semiconductor devices and materials
Ga2O3 and related materials
Photocathodes and Microchannel Plates
Publication details
- Journal / source
- Journal of Luminescence
- Publisher
- Elsevier BV
- Volume
- 293
- Pages
- 121788–121788
- Publication date
- 4 February 2026
- Language
- EN