High-performance AlGaN-based nanowire light-emitting diodes through an engineered insertion layer in the electron blocking layer

Journal of Luminescence 2026

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Authors: Anuda Bibi, Muhammad Usman, Shazma Ali, Aiman Fatima, Haseena Noor

DOI: 10.1016/j.jlumin.2026.121968

Cited by: 1

References: 23

Fields of Study & Subjects

GaN-based semiconductor devices and materials Ga2O3 and related materials Nanowire Synthesis and Applications

References 23