High-temperature annealing-induced defect evolution in Kr-implanted sintered α-SiC
Fields of Study & Subjects
Silicon Carbide Semiconductor Technologies
Advanced Surface Polishing Techniques
Advanced ceramic materials synthesis
Publication details
- Journal / source
- Journal of Nuclear Materials
- Publisher
- Elsevier BV
- Volume
- 626
- Pages
- 156582–156582
- Publication date
- 7 March 2026
- Language
- EN