Trapping-tunable dual-mode optoelectronic device for optoelectronic synapse and photodetector

Journal of Science Advanced Materials and Devices 2026 Open access

Read full text
Authors: Chengdong Yang, Yue Wu, Linlin Su, Lihua Xu, Hongxu Li
DOI: 10.1016/j.jsamd.2026.101098
Cited by: 1
References: 22

Abstract

We propose a thickness-modulated strategy for implementing two operations (optoelectronic synapse and photodetector) simultaneously in the same device structure. For the MoS 2 thickness of 95%. As the thickness increases, excitons and trapping sites are separated by an increasing gap that facilitates a mode transition from synapse to detector. For 368-nm thickness, devices exhibit a photodetector mode with the response speed at millisecond level and responsivity of 163 mA/W.

Fields of Study & Subjects

Advanced Memory and Neural Computing Neural Networks and Reservoir Computing Transition Metal Oxide Nanomaterials

Publication details

Journal / source
Journal of Science Advanced Materials and Devices
Publisher
Elsevier BV
Volume
11
Issue
1
Pages
101098–101098
Publication date
6 January 2026
Language
EN