Co-silanization engineering to construct molecular diffusion barrier for copper metallization on silicon
Fields of Study & Subjects
Copper Interconnects and Reliability
Semiconductor materials and interfaces
Electronic Packaging and Soldering Technologies
Publication details
- Journal / source
- Journal of the Taiwan Institute of Chemical Engineers
- Volume
- 183
- Pages
- 106614–106614
- Publication date
- 3 January 2026
- Language
- EN