Mechanisms of resistivity minimum for thin cobalt films with enhanced bias-stressing resistance by dilute copper alloying
Fields of Study & Subjects
Copper Interconnects and Reliability
Semiconductor materials and interfaces
Semiconductor materials and devices
Publication details
- Journal / source
- Materials Chemistry and Physics
- Volume
- 356
- Pages
- 132336–132336
- Publication date
- 4 March 2026
- Language
- EN