Stratified boron powder synthesized into ultrastable crystalline semiconductor boron quantum dots

Boron quantum dots (BQDs) have emerged as promising alternatives to traditional semiconductor dots, owing largely to their unique optical characteristics and low toxicity. BQDs can be precisely tailored through surface passivation and functionalization, making them versatile for various applications in bioimaging, electrocatalysis, photocatalysis, biosensing, nanomedicine, and chemical sensing. The abundance of phase structures and properties of boron nanostructures has sparked theoretical research interest. This paper presents efficient ultrasonic and laser ablation techniques for producing large-scale, uniform, stable BQDs from bulk boron powder, using Triton™ X-100 as a novel solvent for the first time. Also, no one has ever fabricated a nonvolatile memory device with BQDs synthesized using Triton™ X-100 solvent via laser ablation. One hour of sonication to disperse boron powder in Triton, followed by 1 hour of laser ablation treatment of the mixture and 3 hours of centrifugation at 4000 rpm, resulted in the production of BQDs 1 . Bulk boron powder with layered structures transformed into BQDs 1 under intense high-energy laser of 1064 nm, in one hour. The synthesized BQDs 1 had a mean size of 1.69 nm and a thickness of 2.50 nm, with an enhanced electrical conductivity of 1.52 S/cm, a band gap of 2.30 eV, and these properties make them suitable for applications in nanomedicine, hydrogen storage, nanoelectronics, biomedicine, and radiation shielding. A BQD-PVP memory device was successfully fabricated, demonstrating bistable electrical switching behavior and nonvolatile, reprogrammable memory effects with a high ON/OFF current ratio of 10 4 . A space-charge-limited current model is used to describe the device's conduction mechanism. Future research might focus on optimizing the ON/OFF current ratio and transition voltage to achieve significantly improved performance in next-gen memory tech. BQDs 1 show considerable promise in energy storage applications and optoelectronics, offering unusually high efficiency across various devices. A schematic diagram of the proposed synthesis and characterization of crystalline boron quantum dots synthesized through laser- assisted liquid phase exfoliation.NOTE:Characterization techniques are, HRTEM, FESEM, EDX, XRD, Raman, UV-Vis, PL, FTIR and I-V curve characterization. • Dipole-induced interaction is a crucial factor that facilitates the dispersion of nanomaterials in highly polar solutions. • Numerous uniforms and ultrastable BQDs were synthesized, as observed in the HRTEM images • BQDs with parallel lattice fringes exhibit good crystallization under HRTEM. • The HRTEM images revealed that the as-synthesized BQDs have an average diameter of 1.69 nm, • A significant decrease in peak intensity of XRD was observed for the BQDs compared to bulk boron peak intensity.