Thermal shock resistance characterization of a novel porous Cu filled Sn-3Ag-0.5Cu interconnect material for power device packaging

Materials Letters 2026 Open access

Read full text
Authors: Jiahao Liu, Lijin Qiu, Jixi Huang, Fangzhou Chen, Hongtao Chen, Wenjie Zhou
DOI: 10.1016/j.matlet.2026.140570
Cited by: 1
References: 12

Abstract

Severe thermal mismatch arising from frequent start-stop cycling of power devices induces periodic shear stress at the bondline, rendering conventional Sn-3Ag-0.5Cu (SAC305) solder-based bondlines susceptible to cracking under temperature shock loading. Herein, a novel interconnect material based on porous copper filled SAC305 was proposed. After 1200 temperature shock cycles, the bondline fabricated with porous Cu filled SAC305 exhibited a crack propagation rate of merely 36.4%, while its shear strength decreased from 45.6 MPa to 25.8 MPa. The results confirm that the porous Cu-filled SAC305 interconnect material possesses excellent temperature shock resistance, making it a promising candidate for high-reliability power device packaging.

Fields of Study & Subjects

Electronic Packaging and Soldering Technologies 3D IC and TSV technologies Cellular and Composite Structures

Publication details

Journal / source
Materials Letters
Publisher
Elsevier BV
Volume
415
Pages
140570–140570
Publication date
3 April 2026
Language
EN