In-situ TEM analysis of reversible antiferroelectricity in ZrO2 thin films via near-constant-volume tetragonal symmetry transition

Materials Today 2026

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Authors: Hsin-Yu Hsieh, H. Y. Yen, Yi‐An Chen, Hsiang-Chih Chan, Hsiang-Chih Chan, Chin-Lung Kuo, Miin-Jang Chen, Miin-Jang Chen, Ting-Chang Chang, Chih‐Yen Chen, Jay Shieh
DOI: 10.1016/j.mattod.2026.103257
Cited by: 1
References: 43

Fields of Study & Subjects

Ferroelectric and Negative Capacitance Devices Semiconductor materials and devices Ferroelectric and Piezoelectric Materials

Publication details

Journal / source
Materials Today
Publisher
Elsevier BV
Volume
94
Pages
103257–103257
Publication date
25 February 2026
Language
EN